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IS62C1024
128K x 8 HIGH-SPEED CMOS STATIC RAM
FEATURES
* High-speed access time: 35, 45, 55, 70 ns * Low active power: 450 mW (typical) * Low standby power: 500 W (typical) CMOS standby * Output Enable (OE) and two Chip Enable (CE1 and CE2) inputs for ease in applications * Fully static operation: no clock or refresh required * TTL compatible inputs and outputs * Single 5V (10%) power supply
ISSI
(R)
JANUARY 2000
DESCRIPTION The ISSI IS62C1024 is a low power,131,072-word by 8-bit CMOS static RAM. It is fabricated using ISSI's
high-performance CMOS technology. This highly reliable process coupled with innovative circuit design techniques, yields higher performance and low power consumption devices. When CE1 is HIGH or CE2 is LOW (deselected), the device assumes a standby mode at which the power dissipation can be reduced by using CMOS input levels. Easy memory expansion is provided by using two Chip Enable inputs, CE1 and CE2. The active LOW Write Enable (WE) controls both writing and reading of the memory. The IS62C1024 is available in 32-pin 525-mil plastic SOP and TSOP (type 1) packages.
FUNCTIONAL BLOCK DIAGRAM
A0-A16
DECODER
512 X 2048 MEMORY ARRAY
VCC GND I/O DATA CIRCUIT
I/O0-I/O7
COLUMN I/O
CE1 CE2 OE WE CONTROL CIRCUIT
ISSI reserves the right to make changes to its products at any time without notice in order to improve design and supply the best possible product. We assume no responsibility for any errors which may appear in this publication. (c) Copyright 2000, Integrated Silicon Solution, Inc.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. G 01/14/00
1
IS62C1024
PIN CONFIGURATION
32-Pin SOP 32-Pin TSOP (Type 1)
ISSI
32 31 30 29 VCC A15 CE2 WE A13 A8 A9 A11 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3
A11 A9 A8 A13 WE CE2 A15 VCC NC A16 A14 A12 A7 A6 A5 A4 1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 32 31 30 29 28 27 26 25 24 23 22 21 20 19 18 17 OE A10 CE1 I/O7 I/O6 I/O5 I/O4 I/O3 GND I/O2 I/O1 I/O0 A0 A1 A2 A3
(R)
NC A16 A14 A12 A7 A6 A5 A4 A3 A2 A1 A0 I/O0 I/O1 I/O2 GND
1 2 3 4 5 6 7 8 9 10 11 12 13 14 15 16 ISSI
28
62C1024 27 26 25 24 23 22 21 20 19 18 17
PIN DESCRIPTIONS
A0-A16 CE1 CE2 OE WE I/O0-I/O7 Vcc GND Address Inputs Chip Enable 1 Input Chip Enable 2 Input Output Enable Input Write Enable Input Input/Output Power Ground
OPERATING RANGE
Range Commercial Industrial Ambient Temperature 0C to +70C -40C to +85C VCC 5V 10% 5V 10%
2
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. G 01/14/00
IS62C1024
TRUTH TABLE
Mode Not Selected (Power-down) Output Disabled Read Write WE X X H H L CE1 H X L L L CE2 X L H H H OE X X H L X I/O Operation High-Z High-Z High-Z DOUT DIN Vcc Current ISB1, ISB2 ISB1, ISB2 ICC ICC ICC
ISSI
(R)
ABSOLUTE MAXIMUM RATINGS(1)
Symbol VTERM TBIAS TSTG PT IOUT Parameter Terminal Voltage with Respect to GND Temperature Under Bias Storage Temperature Power Dissipation DC Output Current (LOW) Value -0.5 to +7.0 -10 to +85 -65 to +150 1.5 20 Unit V C C W mA
Notes: 1. Stress greater than those listed under ABSOLUTE MAXIMUM RATINGS may cause permanent damage to the device. This is a stress rating only and functional operation of the device at these or any other conditions above those indicated in the operational sections of this specification is not implied. Exposure to absolute maximum rating conditions for extended periods may affect reliability.
CAPACITANCE(1,2)
Symbol CIN COUT Parameter Input Capacitance Output Capacitance Conditions VIN = 0V VOUT = 0V Max. 6 8 Unit pF pF
Notes: 1. Tested initially and after any design or process changes that may affect these parameters. 2. Test conditions: TA = 25C, f = 1 MHz, Vcc = 5.0V.
DC ELECTRICAL CHARACTERISTICS (Over Operating Range)
Symbol VOH VOL VIH VIL ILI ILO Parameter Output HIGH Voltage Output LOW Voltage Input HIGH Voltage Input LOW Voltage(1) Input Leakage Output Leakage Test Conditions VCC = Min., IOH = -1.0 mA VCC = Min., IOL = 2.1 mA Min. 2.4 -- 2.2 -0.3 -5 -10 -5 -10 Max. -- 0.4 VCC + 0.5 0.8 5 10 5 10 Unit V V V V A A
GND VIN VCC GND VOUT VCC
Com. Ind. Com. Ind.
Notes: 1. VIL = -3.0V for pulse width less than 10 ns.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. G 01/14/00
3
IS62C1024
POWER SUPPLY CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter ICC ISB1 Vcc Dynamic Operating Supply Current TTL Standby Current (TTL Inputs) CMOS Standby Current (CMOS Inputs) Test Conditions VCC = Max., CE = VIL IOUT = 0 mA, f = fMAX Com. Ind. -35 Min. Max. -- -- -- -- -- -- 150 160 40 60 30 40 -45 Min. Max. -- -- -- -- -- -- 135 145 40 60 30 40 -55 Min. Max. -- -- -- -- -- -- 120 130 40 60 30 40
ISSI
-70 Min. Max. -- -- -- -- -- -- 90 100 40 60 30 40 mA mA
(R)
Unit
VCC = Max., Com. VIN = VIH or VIL, CE1 VIH, Ind. or CE2 VIL, f = 0 VCC = Max., Com. CE1 VCC - 0.2V, Ind. CE2 0.2V, VIN VCC - 0.2V, or VIN 0.2V, f = 0
ISB2
mA
Notes: 1. At f = fMAX, address and data inputs are cycling at the maximum frequency, f = 0 means no input lines change.
AC TEST CONDITIONS
Parameter Input Pulse Level Input Rise and Fall Times Input and Output Timing and Reference Level Output Load Unit 0V to 3.0V 5 ns 1.5V See Figures 1a and 1b
AC TEST LOADS
480 5V
480 5V
OUTPUT 100 pF Including jig and scope 255
OUTPUT 5 pF Including jig and scope 255
Figure 1a.
Figure 1b.
4
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. G 01/14/00
IS62C1024
READ CYCLE SWITCHING CHARACTERISTICS(1) (Over Operating Range)
Symbol Parameter Read Cycle Time Address Access Time Output Hold Time CE1 Access Time CE2 Access Time OE Access Time OE to Low-Z Output OE to High-Z Output CE1 to Low-Z Output CE2 to Low-Z Output CE1 or CE2 to High-Z Output -35 Min. Max. 35 -- 3 -- -- -- 0 0 3 3 0 -- 35 -- 35 35 10 -- 10 -- -- 10 -45 Min. Max. 45 -- 3 -- -- -- 0 0 5 5 0 -- 45 -- 45 45 20 -- 15 -- -- 15 -55 Min. Max. 55 -- 3 -- -- -- 0 0 7 7 0 -- 55 -- 55 55 25 -- 20 -- -- 20
ISSI
-70 Min. Max. 70 -- 3 -- -- -- 0 0 10 10 0 -- 70 -- 70 70 35 -- 25 -- -- 25 ns ns ns ns ns ns ns ns ns ns ns
(R)
Unit
tRC tAA tOHA tACE1 tACE2 tDOE tLZOE
(2) (2)
tHZOE
tLZCE1(2) tLZCE2(2) tHZCE
(2)
Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured 500 mV from steady-state voltage. Not 100% tested.
AC WAVEFORMS READ CYCLE NO. 1(1,2)
tRC
ADDRESS
tAA tOHA tOHA
DATA VALID
DOUT
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. G 01/14/00
5
IS62C1024
READ CYCLE NO. 2(1,3)
tRC
ISSI
(R)
ADDRESS
tAA tOHA
OE
tDOE tHZOE
CE1
tACE1/tACE2
tLZOE
CE2
tLZCE1/ tLZCE2
HIGH-Z
tHZCE
DATA VALID
DOUT
Notes: 1. WE is HIGH for a Read Cycle. 2. The device is continuously selected. OE, CE1 = VIL, CE2 = VIH. 3. Address is valid prior to or coincident with CE1 LOW and CE2 HIGH transitions.
WRITE CYCLE SWITCHING CHARACTERISTICS(1,3) (Over Operating Range, Standard and Low Power)
-35 Symbol Parameter Write Cycle Time CE1 to Write End CE2 to Write End Address Setup Time to Write End Address Hold from Write End Address Setup Time WE Pulse Width Data Setup to Write End Data Hold from Write End
(2)
-45 Max. -- -- -- -- -- -- -- -- -- 10 -- Min. 45 35 35 35 0 0 35 25 0 -- 5 Max. -- -- -- -- -- -- -- -- -- 15 -- Min. 55 50 50 45 0 0 40 25 0 -- 5
-55 Max. -- -- -- -- -- -- -- -- -- 20 --
Min. 35 25 25 25 0 0 25 20 0 -- 3
-70 Min. Max. 70 60 60 60 0 0 50 30 0 -- 5 -- -- -- -- -- -- -- -- -- 25 --
Unit ns ns ns ns ns ns ns ns ns ns ns
tWC tSCE1 tSCE2 tAW tHA tSA tPWE
(4)
tSD tHD tHZWE tLZWE
(2)
WE LOW to High-Z Output WE HIGH to Low-Z Output
Notes: 1. Test conditions assume signal transition times of 5 ns or less, timing reference levels of 1.5V, input pulse levels of 0 to 3.0V and output loading specified in Figure 1a. 2. Tested with the load in Figure 1b. Transition is measured 500 mV from steady-state voltage. Not 100% tested. 3. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 4. Tested with OE HIGH.
6
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. G 01/14/00
IS62C1024
AC WAVEFORMS WRITE CYCLE NO. 1 (WE Controlled)(1,2)
tWC
ISSI
(R)
ADDRESS
tSCE1 tHA
CE1
tSCE2
CE2
tAW tPWE(4) tSA tHZWE
HIGH-Z
WE
tLZWE
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
WRITE CYCLE NO. 2 (CE1, CE2 Controlled)(1,2)
tWC
ADDRESS
tSA tSCE1 tHA
CE1
tSCE2
CE2
tAW tPWE(4)
WE
tHZWE tLZWE
HIGH-Z
DOUT
DATA UNDEFINED
tSD
tHD
DIN
DATA-IN VALID
Notes: 1. The internal write time is defined by the overlap of CE1 LOW, CE2 HIGH and WE LOW. All signals must be in valid states to initiate a Write, but any one can go inactive to terminate the Write. The Data Input Setup and Hold timing are referenced to the rising or falling edge of the signal that terminates the Write. 2. I/O will assume the High-Z state if OE = VIH.
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. G 01/14/00
7
IS62C1024
ISSI
ORDERING INFORMATION Commercial Range: 0C to +70C
Speed (ns) 35 35 45 45 55 55 70 70 Order Part No. IS62C1024-35Q IS62C1024-35T IS62C1024-45Q IS62C1024-45T IS62C1024-55Q IS62C1024-55T IS62C1024-70Q IS62C1024-70T Package 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1
(R)
Industrial Range: -40C to +85C
Speed (ns) 35 35 45 45 55 55 70 70 Order Part No. IS62C1024-35QI IS62C1024-35TI IS62C1024-45QI IS62C1024-45TI IS62C1024-55QI IS62C1024-55TI IS62C1024-70QI IS62C1024-70TI Package 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1 525-mil Plastic SOP TSOP, Type 1
ISSI
(R)
Integrated Silicon Solution, Inc.
2231 Lawson Lane Santa Clara, CA 95054 Tel: 1-800-379-4774 Fax: (408) 588-0806 E-mail: sales@issi.com www.issi.com
8
Integrated Silicon Solution, Inc. -- 1-800-379-4774
Rev. G 01/14/00

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